Journal De Physique, III

Zircoma is deposited on cylindrical substrates by flowing post-discharge enhanced chemical vapor deposition In this paper, a two dimensional hydrodynamic and chemical mod- eling of the reactor is described for given plasma characteristics.

T. Belmonte

J. Gavillet

T. Czerwiec

D. Ablitzer

H. Michel

Journal de Physique III

Hydrodynamic and Chemical Modeling of a Chemical Vapor Deposition Reactor for Zirconia Deposition

氧化锆沉积化学气相沉积反应器的水动力学和化学建模

Acoustic properties of thin films R6sumd.Des couches minces de sulfure d'argent Ag2S sont prdparAes sur substrat de pyrex, h la tempArature de 250 °C.par la technique de pulvArisation chimique rAactive en phase liquide ou "spray".Ces dAp0ts.d'Apaisseur variable (0,4-2 pm), sont analysAs par microscopie acous- tique et, plus particuliArement, par la mAthode de relevA de la signature acoustique V(z).Cette signature, effectuAe h dilfArentes frAquences (50, 130, 570 MHz), a permis de caractAriser les propridtds dlastiques du matdriau Ag2S.La valeur du module d'Young, de l'ordre de 180 GPa, est en accord avec la faible cohdsion de la liaison Ag-S et le caractAre de conducteur ionique rapide de Ag2S.Les observations par MEB et AFM permettent d'exphquer l'allure des courbes V(z par les ddfauts de conipacitd lids h la mdthode de prdparation.Les rAsultats expArimentaux sont discutAs en liaison avec la courbe de dispersion de vitesses du premier mode du systbme Ag~s/pyrex.

M. Amlouk

N. Brunet

B. Cros

S. Belgacem

D. Barjon

Étude par microscopie acoustique de couches minces de Ag2S déposées par spray

喷雾沉积Ag2S薄膜的声学显微镜研究

the method of collision cross section calculation 1.

A. Hennad

O. Eichwald

M. Yousfi

O. Lamrous

Prise en compte de l'anisotropie des collisions ion-atome sur le transport des ions par simulation de Monte-Carlo

考虑离子-原子碰撞各向异性对离子输运影响的蒙特卡罗模拟

In this paper, a system based on electro-optic holography is proposed to measure temperature in laminar free convection. Special attention is payed to data treatment. Some experimental results are given.

G. Schirripa Spagnolo

D. Ambrosini

A. Ponticiello

D. Paoletti

Temperature Measurement in Laminar Free Convection Using Electro-Optic Holography

使用电光全息术测量层流自由对流中的温度

L'environnement magnetique tres basse frequence des zones cotieres resulte d'influences multiples. Entre autres, les phenomenes d'induction electromagnetique, fortement tridimensionnels, sont provoques par les variations temporelles du champ magnetique terrestre. Nous proposons une methode de resolution avec des elements finis nodaux en formulation quadrivecteur complexe pour des geometries tridimensionnelles, en utilisant le logiciel generateur Flux Expert. La premiere etape de validation de notre modele est effectuee par comparaison avec d'autres methodes pour des geometries simples de reference.

J. Vatry

J. Berthier

P. Massé

R. Blanpain

Modélisation 3D des perturbations géomagnétiques induites. Validation du modèle éléments finis

三维地磁扰动建模。有限元模型的验证

Afin de calculer le potentiel electrique et l'induction crees par l'activite electrique du cerveau, nous avons developpe des methodes utilisant la Methode des Elements Finis. Ces methodes, qui peuvent s'appliquer a des modeles realistes de tete et qui permettent de tenir compte de la conductivite anisotrope de certains tissus comme l'os, sont presentees. Puis deux exemples numeriques sont decrits: un modele de spheres concentriques et un modele realiste de tete.

Christophe Guérin

Gildas Marin

Line Garnero

Gérard Meunier

Méthodes de type éléments finis pour le calcul des champs électriques et magnétiques en électroencéphalographie et magnétoencéphalographie

有限元法在脑电图和脑磁图电场和磁场计算中的应用

The paper presents calculated line energy values for the reconstructed 60° and 90° glide-set partial dislocations in Si and Ge, formation and migration energy for the reconstructed kink on the reconstructed 90° partials, and energy data for the symmetric Σ = 9 and for two variants of the symmetric Σ = 11 tilt grain boundaries. Criteria are formulated to identify interatomic force field models which are able to provide reliable energy estimates. The anharmonic bond charge (a.bc) model is introduced as an example that approximately fulfills the basic criteria, i.e., describes well the second and third order elastic constants and the phonon dispersion curves. Deviations between energy estimates from the a.bc model and less reliable approaches are discussed. It is shown that in case of the = 11 tilt grain boundary the a.bc model gives different energetical ranking for the so-called Σ = 11A and the Σ = 11B variants in Si and Ge, in agreement with the experimental observations.

H. Teichler

J. Wilder

Dislocation and Grain Boundary Energies in Si and Ge from an Anharmonic Bond Charge Model

从非谐波键电荷模型看硅和锗中的位错与晶界能量

HREM lattice images have been obtained using forbidden reflections generated by (111) stacking faults in silicon lying normal to the beam at temperatures up to 600 °C. Stationary and video images of 30°/90° partial dislocations relaxing toward equilibrium are studied. The lattice images formed from these forbidden reflections show directional fluctuations which are believed to be kinks, since, as expected from mobility measurements, a higher density is observed on 90° partials than on 30° partials, whereas artifacts contribute equally. Video difference images are used to obtain direct estimates of kink velocity. Observations of kink delay at obstacles, thought to be oxygen atoms at the dislocation core, yield unpinning energies and the parameters of the obstacle theory of kink motion. The kink formation energy is obtained from the distribution of kink pair separations in low-dose images. The kink migration rather than formation energy barrier is thus found to control the velocity of unobstructed dislocations in silicon under these experimental conditions.

J.C.H. Spence

H.R. Kolar

H. Alexander

TEM Imaging of Dislocation Kinks, their Motion and Pinning

透射电子显微镜成像中的位错扭折、其运动与钉扎

The Convergent Beam Electron Diffraction technique (CBED) has been applied to determine the lattice strain in Si 1-x Ge x /Si heterostructures and below patterned films on silicon substrates. The well known problem of the stress relaxation which occurs in thinned TEM samples has been overcome, in the case of the heterostructures, by applying the isotropic elasticity theory to the lattice constants measured along different crystallographic directions through the shift of the High Order Laue Zone (HOLZ) lines in the central disk of the CBED patterns. In this way bulk strain values have been obtained, in good agreement with values deduced from independent techniques. In patterned structures, the high spatial resolution of the CBED technique has been applied to determine the distribution of the components of the strain tensor induced into oxidized silicon substrates by Si 3 N 4 stripes. A good agreement with the results obtained using numerical computations has been found.

A. Armigliato

R. Balboni

A. Benedetti

S. Frabboni

A. Tixier

J. Vanhellemont

Strain Measurements in Thin Film Structures by Convergent Beam Electron Diffraction

薄膜结构中的应变测量：会聚束电子衍射法

The thermal behaviour of deformation-induced traps in plastically deformed n-type silicon has been investigated via Deep Level Transient Spectroscopy. Among the four traps usually detected in plastically deformed silicon only two have been found to survive upon annealing: trap A and trap C located at 0.18-0.23 eV and 0.38-0.43 eV from the conduction band edge, respectively. The last one has been related to dislocations.

+5d/bs	e+/GRg: Les Editions de Physique，uzYam8: ，dxwaWB: journal，8x2mMQ: TY4X7V
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Journal De Physique, III

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Hydrodynamic and Chemical Modeling of a Chemical Vapor Deposition Reactor for Zirconia Deposition

Étude par microscopie acoustique de couches minces de Ag2S déposées par spray

Prise en compte de l'anisotropie des collisions ion-atome sur le transport des ions par simulation de Monte-Carlo

Temperature Measurement in Laminar Free Convection Using Electro-Optic Holography

Modélisation 3D des perturbations géomagnétiques induites. Validation du modèle éléments finis

Méthodes de type éléments finis pour le calcul des champs électriques et magnétiques en électroencéphalographie et magnétoencéphalographie

Dislocation and Grain Boundary Energies in Si and Ge from an Anharmonic Bond Charge Model

TEM Imaging of Dislocation Kinks, their Motion and Pinning

Strain Measurements in Thin Film Structures by Convergent Beam Electron Diffraction

Thermal Behaviour of Deep Levels at Dislocations in n-Type Silicon