材料，尤其是晶体材料，为我们现代技术驱动的世界奠定了基础。材料的主导地位是通过详细的科学研究实现的。生长和评估各种材料的更完美晶体的技术的进步是当今许多先进技术的根源。晶体材料的演变和发展涉及由学术界和工业界的专职科学家进行的研究，涉及广泛的学科领域，包括生物学、化学、物理学、材料科学和工程学。在信息技术、光子学、能量存储和收集、环境保护、医药和食品生产中的关键应用需要对晶体生长的深入理解和控制。这可能涉及合适的生长方法和从块体到纳米尺度的材料表征。

Materials, especially crystal materials, form the foundation of our technology-driven world. The dominant role of materials is achieved through detailed scientific research. Advances in the techniques for growing and evaluating perfect crystals of various materials are the source of many advanced technologies today. The evolution and development of crystal materials involve research conducted by dedicated scientists from academia and industry, spanning a wide range of disciplines including biology, chemistry, physics, materials science, and engineering. Key applications in information technology, photonics, energy storage and collection, environmental protection, medicine, and food production require a deep understanding and control of crystal growth. This may involve suitable growth methods and characterization of materials from bulk to nanoscale.

材料，尤其是晶体材料，是现代技术驱动世界的基础。材料的主导地位通过深入的科学研究得以实现。晶体材料的生长和评估技术的进步是许多先进技术的根源。这些材料的演变和发展涉及学术界和工业界的专职科学家，涵盖生物学、化学、物理学、材料科学和工程学等多个学科领域。在信息技术、光子学、能源存储与收集、环境保护、医药和食品生产等关键应用中，对晶体生长的深入理解和控制至关重要。这可能需要采用合适的生长方法以及从宏观到纳米尺度的材料表征。

Progress in Crystal Growth and Characterization of Materials

The integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. In the last decade, there have been tremendous advances in Si preparation in hydrogen-based metalorganic vapor phase epitaxy (MOVPE) environment, III–V nucleation and subsequent heteroepitaxial layer growth. Simultaneously, MOVPE itself took off in its triumphal course in solid state lighting production demonstrating its power as industrially relevant growth technique. Here, we review the recent progress in MOVPE growth of III–V-on-silicon heterostructures, preparation of the involved interfaces and fabrication of devices structures. We focus on a broad range of in situ, in system and ex situ characterization techniques. We highlight important contributions of density functional theory and kinetic growth simulations to a deeper understanding of growth phenomena and support of the experimental analysis. Besides new device concepts for planar heterostructures and the specific challenges of (001) interfaces, we also cover nano-dimensioned III–V structures, which are preferentially prepared on (111) surfaces and which emerged as veritable candidates for future optoelectronic devices.

Oliver Supplie

Oleksandr Romanyuk

Christian Koppka

Matthias Steidl

Andreas Nägelein

Agnieszka Paszuk

Lars Winterfeld

Anja Dobrich

Peter Kleinschmidt

Erich Runge

Thomas Hannappel

Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory

硅基III-V族金属有机气相外延：实验与理论

Koichi Kakimoto

Bing Gao

Xin Liu

Satoshi Nakano

Growth of semiconductor silicon crystals

半导体硅晶体的生长

Monolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.

Qiang Li

Kei May Lau

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

电子与光电子用(001)硅基上高度失配III-V材料的异质外延生长

Graphitic carbon nanoparticles are in high demand for sensing, health care, and manufacturing industries. Physical vapour deposition (PVD) methods are advantageous for in-situ synthesis of graphitic carbon particles due to their ability to produce large area distributions. However, the carbon particles can agglomerate, irrespective of the PVD method, and form coagulated structures while growing inside the vacuum chamber. The random shapes and sizes of these particles lead to non-uniform properties and characteristics, hence making them less attractive for numerous industrial applications, such as energy storage batteries and structural health monitoring. Therefore, the in-situ synthesis of isolated carbon particles produced in a single-step PVD process having control over size, shape, and large area distributions has remained inspiring for the past 30 years. This article gives an overview of characteristics, applications, industrial impact, and global revenue of graphite particles. A critical review on in-situ growth of graphitic carbon particles with different PVD methods is described with selected examples. A comprehensive summary compares the capability of different PVD techniques and corresponding carbon resources to produce graphitic particles with numerous sizes and shapes. Analysing the outputs of various PVD methods, a generalised four-stage model is explained to understand the in-situ growth of graphitic carbon particles, which start from seedings and grow as particles, clusters, and granular structures. It is concluded that the isolated carbon particles can be produced with specific size, shape, and distributions irrespective of the PVD method employed, by maintaining precise control over combinations of deposition system properties and process parameters.

Abdul Wasy Zia

Martin Birkett

Mohsin Ali Badshah

Munawar Iqbal

Progress in-situ synthesis of graphitic carbon nanoparticles with physical vapour deposition

石墨碳纳米颗粒物理气相沉积原位合成进展

This review is an audit of various Carbon fibers (CF) surface modification techniques that have been attempted and which produced results with an enhancement in the interfacial characteristics of CFRP systems. An introduction to the CF surface morphology, various techniques of modifications, their results and challenges are discussed here. CFs are emerging as the most promising materials for designing many technologically significant materials for current and future generations. In order to extract all the physic-mechanical properties of CF, it is essential to modulate a suitable environment through which good interfacial relation is achieved between the CF and the matrix. The interface has the utmost significance in composites and hybrid materials since tension at the interface can result in a deterioration of the fundamental properties. This review is aimed to provide a detailed understanding of the CF structure, its possible ways of modification, and the influence of interfacial compatibility in physic-mechanical and tribological properties. Both physical and chemical modifications are illustrated with specific examples, in addition to the characterization methods. Overall, this article provides key information about the CF based composite fabrication and their many applications in aerospace and electronics- where light weight and excellent mechanical strength are required.

Nischith Raphael

K. Namratha

B.N. Chandrashekar

Kishor Kumar Sadasivuni

Deepalekshmi Ponnamma

A.S. Smitha

S. Krishnaveni

Chun Cheng

K. Byrappa

Surface modification and grafting of carbon fibers: A route to better interface

碳纤维表面改性与接枝：实现更佳界面的途径

Viviana Scognamiglio

Valeria Nocerino

Bruno Miranda

Luca De Stefano

Emanuela Tempesta

Manuela Rossi

Francesco Baldassarre

Angela Altomare

Francesco Capitelli

Novel enhancing materials for biosensor design: The case studies of erbium-, gadolinium- and strontium-doped Ca10(PO4)6(OH)2 hydroxyapatite

用于生物传感器设计的创新增强材料：掺铒、钆和锶的Ca10(PO4)6(OH)2羟基磷灰石案例研究

Angelo Oliveira Silva

Alessandro Rogério Paulazzi

Karina Luzia Andrade

Ricardo Antonio Francisco Machado

Cintia Marangoni

Dachamir Hotza

Electrospray crystallization: A review on submicrometric and nanosized crystal synthesis

电喷雾结晶：亚微米和纳米尺寸晶体合成的综述

Since the beginning of humanity, man has generated various theories to explain the formation of the Universe, and the origin of life on Earth. However, even while these theories coincide sometimes, they are also subject to controversy, but it was Albert Einstein who postulated the theory of special and general relativity, in the understanding of the formation and functioning of the Universe. Meanwhile, for decades, experiments have been carried out regarding the origin of life in our planet. While these experiments have made relevant contributions in obtaining essential chemical blocks of life, obtaining a functional biomolecule as authoritative proof of how life began has not been found. This shows that not all variables implicated in the origin of life have been considered. For a better comprehension of the origin of life, the objective of this work was to synthesize calcium carbonate biomorphs in the presence of various biomolecules in atmospheric conditions that emulate the Precambrian era and also in the conditions of our current atmosphere. Our results show that both in the conditions that emulate the Precambrian era and in the current atmosphere, biomorphs show a spherical morphology, which is compatible with life forms. But a functional biomolecule that could indicate a beginning of life was not obtained. For the purpose of explaining the reason for which it has not been possible to obtain a pioneer organism, such as occurred in the primeval era, I have proposed a theory of life in which I have considered the interaction of the various lengths of wave of the electromagnetic spectrum, the magnetic fields of the various atoms, the energy and the physical laws that rule the Universe. The proposed equation for the origin of life (L = amc2) is grounded in the equation of special relativity (E = mc2) and general relativity for the Universe, equations that specify how the local density of matter and energy determine the geometry of space-time. For this aforementioned equation: L represents life, the letter "a" stands for absorption of a specific type of equivalent to the Higgs Boson, "m" corresponds to matter and finally "c" is the light speed. Considering the four factors of space-time-matter-energy that participated in the origin of life in the equation that I propose, the absorption that matter should have been also incorporated, which should be generated based on the Higgs Boson, also known as the particle of God, or perhaps, on another particle equivalent to that of the Higgs. The origin of life therefore fulfills the four factors of space-time-matter-energy in the aforementioned equation L = amc2.

Mayra Cuéllar-Cruz

The equation of life in the Universe: Biomorphs as reminiscence of the first forms of life

宇宙中的生命方程：生物形态作为生命最初形式的回忆

Defect-selective etching methods are commonly used for a quick assessment of crystallographic and chemical inhomogeneities in various semiconductors, including nitrides. Because of the stability of GaN, "extreme" etchants such as molten bases and hot phosphoric/sulfuric acids are required for chemical etching. Photoetching provided an alternative and attractive path for room temperature etching of GaN. In this comprehensive review the introduction and subsequent modification of the photoetching method used for revealing defects and inhomogeneities in GaN are described in detail. The initial etchant, a KOH-based aqueous solution, was subsequently modified by addition of potassium peroxydisulphate (K2S2O8), and later trisodium phosphate (Na3PO4) was added. The mechanism of photoetching in these solutions is presented and the advantages of using two- and three-component solutions are considered. This mechanism is based on generation of charge carriers (electrons and holes) by illumination of GaN with supra-bandgap light and was named photo-electrochemical (PEC) method. A correlation has been established between the carrier concentration in n-type GaN and the photoetch rate. A model is outlined that allows interpretation of large differences in the photoetch rate of inhomogeneous samples. Numerous examples of defects revealed by photoetching of GaN bulk crystals and homo- or hetero-epitaxial layers are described. The corresponding models for the formation of etch features are discussed and the results are compared with those obtained from other structural methods used for analysis of novel defects found in ammonothermally grown GaN crystals. The range of defects revealed by photoetching in GaN includes dislocations, inversion domains, nano-pipes, nano-scale and extended inhomogeneities. The importance of using photoetching for analysis of potentially new types of defect in recently grown ammonothermally GaN bulk crystals is emphasized. Future prospects of the PEC method for analysis of defects are considered.

J.L. Weyher

J.J. Kelly

Defect selective photoetching of GaN: Progress, applications and prospects

GaN缺陷选择性光刻蚀：进展、应用与前景

The origin of life has been marked by existing chemical, physical and atmospheric conditions in the primeval era of Earth. In this sense, experiments have been carried out that emulate the conditions of the Precambrian era, where organic blocks such as amino acids, sugars, organic compounds and O2 have been synthesized from the elements of this condition. Nevertheless, even while these results have been disruptive, allowing a significant advance in the origin of life, no functional biomolecules have been synthesized. Considering the work done previously, as a starting point and the evidences of the synthesis of biomorphs in the presence of biomolecules, the objective of this study was the synthesis of barium silico-carbonate biomorphs, based on biomolecules in Precambrian conditions. The purpose of this is to identify if it is possible to obtain functional biomolecules. The results showed that the barium biomorphs synthesized in conditions that emulate the primitive era present spherical or circular morphology, with a chemical composition that corresponds to the polymorphs of witherite, goethite and carbonaceous material (CM) such as protein, carbohydrate and phosphate group bonds. However, the synthesis of an active or functional biomolecule was not possible. The results therefore show that to be able to obtain a functional biomolecule that could be considered a sign of life springing from organic and inorganic compounds, it is necessary to involve other factors heretofore not considered. This is due to the fact that chemical elements per se, together with some atmospheric factors that have been described which apparently permitted the formation of the protocell in the primitive era of Earth, are not sufficient to obtain functional biomolecules. In this way, the origin of life may be understood from the equation of life (L = amc2), considering all involved factors and not only the chemical composition of elements that make up various organisms in combination with only some atmospheric factors.

The equation of the origin of life in the Universe (Part II): The combination of chemical elements does not determine the emergence of life on Earth

宇宙生命起源方程（第二部分）：化学元素的组合并不决定地球上生命的出现

Abbreviation	Prog. Cryst. Growth Charact. Mater.
Journal Impact	4.63
Quartiles(Global)	MATERIALS SCIENCE, CHARACTERIZATION & TESTING(Q1)

ISSN	0960-8974, 1878-4208
h-index	55

Publication Information	Publisher: Elsevier Ltd，Publishing cycle: Quarterly，Journal Type: journal，Open Access Journals: No
Basic data	Year of publication: 1990，Proportion of original research papers: 0.00%，Self Citation Rate:4.40%， Gold OA Rate: 8.33%
Average review cycle	网友分享经验：>12周，或约稿
Average recruitment ratio	网友分享经验：较易

Progress in Crystal Growth and Characterization of Materials

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